This investigation shows varying photoemission efficiency in GaAs surfaces, suggesting novel activation methods for improvement.
We have investigated photoemission properties of GaAs surfaces prepared by repetitive thermal pretreatment and negative electron affinity (NEA) activation cycles. It is shown that the photoemission efficiency drastically varied with the pretreatment sequence. We have discussed the photoemission properties with two GaAs samples with different quantum efficiencies, and have found that the variation of quantum efficiency with pretreatment sequence has no relation to the absolute values of quantum efficiency. This result indicates that the generation and transfer and the emission of electrons are independent processes. We have also discussed the novel NEA activation method which is expected to improve photoemission properties.
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Inagaki et al. (2018) studied this question.
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