Verification of Design and Process for Optimal Large-Area Substrate Eutectic Bonding in SiP Packaging

A ceramic-packaged, dual-layer-stacked System-in-Package (SiP) architecture combines the hermeticity of ceramic substrates with the superior radio frequency (RF) performance of organic substrates to meet the demands for high-density integration, cost-effectiveness, and high performance. This study investigates the issues of thermal mismatch, solder joint contamination, and void formation during the large-area eutectic bonding of the lower organic substrate using Pb70In30 solder through simulation and an experimental approach. The results indicate that: (a) the post-bonding warpage of the organic substrate can be reduced to under 80 µm by optimizing its copper layer thickness, dielectric layer thickness, and cavity/slot distribution, and (b) flux pretreatment can be employed to reduce the Pb70In30 solder in an N2/H2 mixture at a eutectic temperature of 285 °C and a pressure of 1.5 kPa effectively promotes solder spreading, prevents solder joint contamination, and yields a void formation percentage below 10%, a shear strength of 23.66 MPa, and solder overflow exceeding 90%, thereby satisfying the requirements for reliable large-area eutectic bonding. These findings offer guidance for the packaging process design of ceramic-packaged, dual-layer-stacked SiPs.