Extreme Bandgap Polarization Doped AlGaN Layers on Bulk AlN for pn-diodes With an 8.5 MV cm⁻¹ Breakdown Field and Forward Current Density Exceeding 20 kA Cm⁻²

In this paper we present a study of distribution polarization doped AlxGa1−xN layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm−1 and a large forward current density (∼23 kA cm−2). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface.