High-efficiency visible-range micro-LEDs are in strong demand for integrated photonics, flexible optoelectronics, and sensing. This work demonstrates the feasibility of fabricating nanoscale light-emitting devices based on core–shell p-GaP/GaPNAs/n-GaP heterostructured nanowires epitaxially grown on a silicon substrate. A post-growth fabrication process for nanostructured LEDs has been developed. A design is proposed for a top transparent electrode consisting of a bilayer with an indium–tin oxide top layer and a molybdenum oxide sublayer. Numerical modeling and electrical measurements show that introducing a molybdenum oxide sublayer with a high work function reduces the potential barrier at the semiconductor interface, thereby improving the efficiency of the light-emitting devices.
Novikova et al. (Mon,) studied this question.