Drift Layer Engineering for Electric Field Management in Vertical Gallium Nitride Fin Field Effect Transistors for Power Electronic Applications

Bulk gallium nitride (GaN) power transistors are in high demand due to their superior blocking capacity. This work performs an analysis on fully vertical GaN in field effect transistors featuring submicron, fin‐shaped channels. Narrow fin‐width devices exhibit normally off operation with a minimum subthreshold swing of 60 mV/dec limit. However, normally off operation is constrained by width of the fin and its doping levels. The proposed device structure features a low specific on resistance around 0.149 mΩ.cm 2 with a blocking capability of 290 V at a minimal gate leakage 10 −13 kA/cm 2 . With precise engineering of the drift layer along with doping, the device remarks 17% improvement in breakdown voltage. The proposed design obviates the p‐type doping and provides a novel design technique to yield higher blocking voltage with reduced on resistance. These findings highlight the immense capabilities of vertical GaN fin transistors in power switching applications.