650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are manufactured. It is worth mentioning that generation II is fabricated using 45 <tex-math notation="LaTeX">μ m </tex-math> ultrathin wafer technology. Due to extra parasitic BJTs, both the thin and ultrathin SJ-IGBT have a larger base amplification factor, that the current density capability exceeds 650 A/cm 2 . Compared with thin SJ-IGBT both at 650 A/cm 2 and at room temperature, the on- state voltage of the ultrathin SJ-IGBT could be decreased by about 160 mV, turn-off energy loss could be decreased by 22%. Furthermore, the ultrathin SJ-IGBT maintains a robust short circuit capability of no less than <tex-math notation="LaTeX">10~ μ s </tex-math> under 400 V DC bus voltage.