A Sn-doped Ga 2 O 3 thin film was deposited on a n + -Si substrate by metal-organic chemical vapor deposition. The Ga 2 O 3 film was found to be amorphous-like and exhibited n-type conduction with Sn doping. Room-temperature electroluminescence was clearly observed from the Sn:Ga 2 O 3 /n + -Si diode, including an ultraviolet (UV) emission at ~ 370 nm, a yellow emission at ~ 580 nm, and a red emission at ~ 680 nm. The UV emission is assigned to the transition from Sn Ga donor to the V Ga acceptor, whereas the visible emissions were assigned to be related to the dangling bond defects.
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Zhao et al. (2011) studied this question.
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