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December 1, 2006IEEE Transactions on Electron Devices

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

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Authors

YCYoung Chul ChoiMPM. PophristićHCHo‐Young Cha

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Choi et al. (2006) studied this question.

synapsesocial.com/papers/69d9a6497f18ff2fefa3c2cbhttps://doi.org/10.1109/ted.2006.885679
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  3. 3High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates1999 · 539 citations
  4. 4High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates2006 · 445 citations
  5. 5Development of strain reduced GaN on Si (111) by substrate engineering2005 · 55 citations