Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 17, 2002Electronics Letters

AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

View Full Paper
Ask AI
Bookmark
Share

Authors

YCY. CordierGroupe de Recherche en Droit, Économie, GestionFSF. SèmondCentre de Recherche sur l'Hétéro-Epitaxie et ses ApplicationsJMJ. MassiesCentre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Cordier et al. (2002) studied this question.

synapsesocial.com/papers/6a978fc07f1bd40ee0e3395ehttps://doi.org/10.1049/el:20020060
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaN MESFETs on (111) Si substrate grown by MOCVD2000 · 39 citations
  2. 2AlGaN/GaN high electron mobility transistors on Si(111) substrates2001 · 117 citations
  3. 3High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy2001 · 131 citations
  4. 4Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications2001 · 157 citations
  5. 5GaN on Si Substrate with AlGaN/AlN Intermediate Layer1999 · 209 citations