Ultralong Silicon Grains Grown by Excimer Laser Crystallization

The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, particularly at its tail region, and the sample structure. Grains as long as 25 µm were successfully grown at room temperature using a combination of a V-shaped light intensity profile, a light pulse waveform with a long tail, and a stacked sample structure with a cap layer. Grains of 11 µm in length were also grown in a capless sample.