Verification of electron distributions in silicon by means of hot carrier luminescence measurements

This paper investigates the use of hot carrier luminescence (HCL) measurements as a mean for the verification of carrier energy distribution functions in submicron silicon devices subject to high electric fields. To this purpose, physically-based two-dimensional (2-D) simulations of the spectral distribution of HCL are compared with extensive experimental data on special purpose n/sup +//n/n/sup +/ test structures that demonstrate lateral field profiles similar to real MOSFETs without the obscuring effects of a gate electrode. Good agreement between measured and simulated data is observed over wide channel length, bias, and temperature ranges, thus providing for the first time a direct verification of simulated electron energy distributions in a MOSFET-like environment.