Experimental investigation demonstrates functional low-voltage tunnel field-effect transistor circuit configurations, highlighting their feasibility for ultra-low-power electronic systems.
Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.
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Rangasamy et al. (2024) studied this question.
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