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A new gas sensor based on metal-oxide- semiconductor field-effect transistor was fabricated and characterized. The sensor has p-type channel, floating-gate, and control-gate formed horizontally so that various kinds of sensing material can be used in this basic sensing structure. As a sensing material in this letter, SnO x was adopted to sense a target gas of NO 2 . Measured drain current was changed by 195% at a NO 2 gas concentration of 50 ppm. Sensing speed is <;50 s at 180 °C.
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Kim et al. (2014) studied this question.
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