Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 2006Journal of The Electrochemical Society

Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with Osub 3 as Oxidant

View Full Paper
Ask AI
Bookmark
Share

Authors

SKSeong Keun KimKorea UniversitySLSuk Woo LeeInstitute for Basic ScienceCHCheol Seong HwangTokyo Institute of Technology

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kim et al. (2006) studied this question.

synapsesocial.com/papers/69dd95c680eea7d3f699cf81https://doi.org/10.1149/1.2177047
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition2004 · 114 citations
  2. 2XIV. Researches on the refraction, dispersion, and sensitiveness of liquids1863 · 408 citations
  3. 3Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by <i>in situ</i> scanning transmission electron microscopy2003 · 34 citations
  4. 4Ultrathin Film Encapsulation of an OLED by ALD2005 · 152 citations
  5. 5A Quantum Chemical Study of the Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub> Using AlCl<sub>3</sub> and H<sub>2</sub>O as Precursors2004 · 77 citations