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Scanning tunneling microscopy (STM) observation was performed for the surface of diamond epitaxial film which was grown on a diamond (001) substrate by microwave plasma-assisted chemical vapor deposition (CVD). The surface was stable even in air, and it showed a reflection high-energy electron diffraction (RHEED) pattern of the 2×1/1×2 structure. Images of the atomic level corresponding to the RHEED pattern were obtained by STM in air. Significant extension of dimer rows was observed over the entire surface. Strong similarity between Si(001) grown by molecular beam epitaxy (MBE) and diamond (001) grown by CVD was shown.
Tsuno et al. (Wed,) studied this question.