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In this paper, we present a new simulation program with integrated circuit emphasis macromodel of the recently physically implemented memristor. This macromodel could be a powerful tool for electrical engineers to design and experiment new circuits with memristors. Our simulation results show similar behavior to the already published measurements of the physical implementation. Our approach provides a solution for the modeling of boundary conditions following exactly the published mathematical model of HP Labs. The functionality of our macromodel is demonstrated with computer simulations. The source code of our macromodel is provided.
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Rák et al. (2010) studied this question.
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