InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate

This is the authors' abstract. We don't add key points for this paper.

We present the results of a study on epitaxial transfer of InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma-activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">∘C</tex></formula> –165 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX"> ∘C</tex></formula> , and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">A/cm² </tex></formula> were extracted to be 260 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">∘C</tex></formula> , 0.56 eV, and 10.5 V, respectively.