The effect of annealing on the electrical properties of selectively doped GaAs/N-AlGaAs heterojunction structures grown by MBE has been studied. Very high electron mobility in this structure at 77 K decreased considerably after annealing at about 700°C. However, it remained at a high value even after annealing when the Si doping concentration in N-AlGaAs was reduced to about 1×10 18 cm -3 . These results are discussed in terms of diffusion of Si impurities doped in N-AlGaAs.
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Ishikawa et al. (1981) studied this question.
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