The preparation and operation of lattice-matched Al0.48Ga0.52As/Ga0.47In0.52As/Al0.48In0 .52As double-heterostructure lasers lasing at 1.65 μm grown on InP substrates by molecular-beam epitaxy are described. The present result represents the first current injection semiconductor laser ever fabricated from the Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0 .52As double heterostructure. Broad-area Fabry-Perot laser (0.15-μm-thick Ga0.47In0.53As active layer) with pulsed current threshold density as low as 3.3 kA/cm2 has been obtained at room temperature and operated at heat-sink temperatures as high as 115 °C studied. The threshold-current temperature dependence has a characteristic temperature T0 of 70 °C in the temperature range of 25°–115 °C.
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W. T. Tsang (1981) studied this question.
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