Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation

In this Letter, we report gate leakage suppression in p-GaN/AlGaN p-channel transistors enabled by a transferred boron nitride (BN) gate dielectric for high-temperature operation. To elucidate the impact of BN integration, we systematically compare transfer characteristics, transconductance, and related metrics as functions of temperature (25–300 °C) for BN and conventional Schottky gate devices. Notably, current density in the BN device remains stable above ∼3 mA/mm at 300 °C, with an on/off ratio >103 and ID, max × LDS reaching ∼47 μA. At the same time, both the threshold voltage shift and the subthreshold slope show minimal variation, highlighting the excellent stability of this device. These results can provide insight into design strategies for high-temperature p-GaN p-channel transistors.