Compositional dependence of the Auger coefficient for InGaAsP lattice matched to InP

We present a detailed discussion of previous theoretical and experimental results relating to the pure-collision and phonon-assisted Auger coefficients of semiconductor laser materials. Subsequently, we calculate the dependence of the Auger coefficient of In1−xGaxAsyP1−y lattice matched to InP (x≊0.45y) on the compositional parameter y. Our analysis, which incorporates improved Kane model wave function overlap integrals and spectral density functions, yields results which are in good agreement with recent experiments.