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May 4, 1998Applied Physics Letters

Deep centers in n-GaN grown by reactive molecular beam epitaxy

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Authors

ZFZ-Q. FangBeijing University of TechnologyDLD. C. LookWright State UniversityWKW. KimYonsei University

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Cite This Study

Fang et al. (1998) studied this question.

synapsesocial.com/papers/6a0e58b98561d4cf804c29bbhttps://doi.org/10.1063/1.121274
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