Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 mu m) and 0.75 mA for a coated laser (R approximately 0.9, L=198 mu m), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>