The enhanced etch rate of ion damaged SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> has been used to controllably taper steps in thermally grown SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . A 50-keV Ar + implantation with a dose of 3 × 10 13 /cm 2 produces a uniform taper of 35-45° with no vertical step at the top edge of the window. These results are observed by viewing the sample on edge with a scanning electron microscope (SEM). The taper angle of the oxide varies from near vertical (90°) at a dose of 4 × 10 12 /cm 2 to very small angles at large dosages.
No takes yet. Share an insight, caveat, or question.
Moline et al. (1973) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: