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April 1, 1981Applied Physics Letters

Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructures

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DTD. C. TsuiPrinceton UniversityAGA. C. GossardUniversity of California, Santa Barbara

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Tsui et al. (1981) studied this question.

synapsesocial.com/papers/6a1be212bc71fb1015a90d44https://doi.org/10.1063/1.92408
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Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Theory of Hall Effect in a Two-Dimensional Electron System1975 · 301 citations
  2. 2New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance1980 · 7,111 citations
  3. 3Theory of Oscillatory <i>g</i> Factor in an MOS Inversion Layer under Strong Magnetic Fields1974 · 472 citations
  4. 4Observation of two-dimensional electrons in LPE-grown GaAs-Al<i>x</i>Ga1−<i>x</i>As heterojunctions1979 · 53 citations