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A new method is proposed to electrically determine MOS transistor channel length with both accuracy and convenience. Based on the linear region relationship between effective channel length L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf> and channel resistance R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">chan</inf> of an MOS transistor, this method determines L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf> by applying relatively large but constant gate voltage to eliminate threshold voltage determination and takes into account external resistance. Comparison of this method with SEM measurement shows very good agreement (within ±0.1 µm resolution limit of our SEM technique).
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Chern et al. (1980) studied this question.
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