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The refractive indices of In0.49Ga0.51P, In0.49Al0.51P, and In0.49Ga0.29Al0.22P, lattice matched to GaAs grown by molecular-beam epitaxy, are determined from double-beam reflectance measurements for photon energies ranging from 0.6 to 1.3 eV. Variation of the In0.49Ga0.51−xAlxP, refractive index with Al composition x and photon energy is calculated according to the single-effective-oscillator model. These analytical results are then compared with experimental data.
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Tanaka et al. (1986) studied this question.
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