Molecular beam epitaxy growth of a planar p n junction on a (111)A GaAs substrate, using the amphoteric property of silicon dopant

Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p–n junctions have also been grown. Depending on the structure of the layers, the I–V characteristics have a form which is typical of conventional or inverted diodes.