ZnO 1– x S x films in the whole composition range were deposited by radio‐frequency reactive sputtering on different substrates. Raman measurements verified that the LO phonon of ZnO shifts towards lower frequencies as a function of the S content in the alloyed films. The composition dependence of the band gap energy in the ternary system was determined by optical transmission and the optical bowing parameter was found to be about 3 eV. We compare this behavior to ZnOSe films which can, however, only be synthesized in a narrow composition range close to the binary constituents ZnO and ZnSe. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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