Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 19, 2003Applied Physics Letters

High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing HfN(CH3)24 precursor and H2O oxidant

View Full Paper
Ask AI
Bookmark
Share

Authors

MCMoonju ChoMicron (United States)HPHong Bae ParkKyungpook National UniversityJPJaehoo ParkSeoul National University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Cho et al. (2003) studied this question.

synapsesocial.com/papers/6a21573cf6aa648d3a57e4e9https://doi.org/10.1063/1.1637128
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O1990 · 209 citations
  2. 2Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate2002 · 115 citations
  3. 3Application of HfSiON as a gate dielectric material2002 · 378 citations
  4. 4Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications2003 · 106 citations
  5. 5Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks2002 · 179 citations