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June 30, 2003Journal of Applied Physics

Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications

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HHHang HuHuazhong University of Science and TechnologyCZChunxiang ZhuNational University of SingaporeYLY. F. LuUniversity of Nebraska–Lincoln

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Hu et al. (2003) studied this question.

synapsesocial.com/papers/6a70f247ac440176ef29a1e2https://doi.org/10.1063/1.1579550
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