ZnMgO/Se Thin Film Photovoltaic Devices With Graphene/Silver Nanowire Stacked Flexible Transparent Conducting Electrodes

Graphene/silver nanowire (AgNW)‐stacked transparent conducting electrodes (TCEs) with bending durability, high transparency at around 80% in visible range and low electrical resistance at ~10Ω, were implemented in n‐ZnMgO/p‐Se flexible piezophototronic devices. On inserting a sol–gel ZnO layer between the sputter‐deposited ZnMgO and graphene/AgNW TCE layers to protect graphene from sputtering damage, the developed TCEs improved the bending durability of photovoltaic conversion significantly. Device with a sol–gel ZnO protection layer exhibited the photovoltaic conversion effect clearly at a power conversion efficiency of 1% with V oc = 0.588 V, J sc = 5.43 mA/cm 2 , and fill factor = 0.314. Notably, devices using graphene/AgNW TCEs showed a 56% smaller decline in J sc compared with devices using indium tin oxide (ITO) TCEs after 10 bending cycles at a curvature radius of ~7 mm. The results of this study are expected to guide future research on the design and development of high‐performance TCEs for various applications.