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The linear and nonlinear optical properties of a series of ternary alloy AlxGa1−xAs/AlAs multiple-quantum-well structures have been investigated and related to the multilayer configuration. The direct energy gap was found to scale with the AlAs mole fraction as predicted by Lee and Yuravel Phys. Rev. B 21, 659 (1980) and the band offset ratio to depend on the alloy composition. Exciton absorption bleaching was observed at room temperature and the nonlinear absorption cross sections were estimated for the first two confined excitonic states. Finally, the possibility of achieving optical gain for the type-II band alignment along the growth direction as well as in the layer plane is demonstrated.
Dabbicco et al. (Sat,) studied this question.
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