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We systematically developed a perpendicularly magnetized synthetic antiferromagnetically (p-SAF) coupled reference structure with strong interlayer exchange coupling (IEC) at the "first peak", where the thickness of the Ru layer between the Co/Pt superlattice layers was 0.4–0.5 nm. A high IEC energy density (2.2 erg/cm2) and a high magnetoresistance ratio (110–150%) with an ultralow resistance-area product (2–5 Ω·µm2) were simultaneously achieved in the integrated magnetic tunnel junctions of the p-SAF structure. The use of p-SAF coupling with strong IEC is attractive because of its ability to produce highly stable and unidirectional reference layers for memory applications.
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Yakushiji et al. (2015) studied this question.
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