Randomized trial evaluates junction temperature accuracy in SiC power modules, suggesting improved thermal management.
Accurate junction temperature (Tj) sensing is essential for the reliability of silicon carbide (SiC) power modules in electric vehicles. Nonetheless, the physical separation and consequent thermal signal delay between sensing elements and chips pose significant challenges to precise junction temperature monitoring. To solve this issue, an embedded temperature sensing structure integrated into the designed double-sided cooling (DSC) SiC power module is proposed, which leverages 3D vertical interconnects to enhance temperature observability. The customized design of a copper spacer serves as the primary heat dissipation path and electrical connection between the upper and lower chips in the same location. A compact thermal resistance network and 3D finite-element simulations are developed to reveal the vertical thermal coupling between the spacers and the chips, enabling accurate junction temperature estimation from spacer temperature. The proposed concept is experimentally validated on a fabricated prototype using embedded K-type thermocouples and an IR camera under power cycling conditions. The measured temperature differences between the copper spacers and the junction temperature are maintained within approximately 0.5 –2 °C under the tested operating range. This approach provides a potential application in real-time condition monitoring and thermal management in high-power-density electric drives.
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Li et al. (2026) studied this question.
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