Interlayer-Free Ferroelectric Transistors via Depletion Charge Boosting in Oxide Channel for Neuromorphic Applications

(HZO) layer. The engineered IGO/HZO FeFETs exhibit an improved memory window of 1.612 V, potentiation/depression cycling up to 5120 pulses, and stable multi-level retention of 100 s for 64 conductance states. Furthermore, the multilayer perception-based artificial neural network simulations yield a recognition accuracy of approximately 89% after 125 training epochs. This depletion charge boosting technology provides a potential pathway for improving oxide channel-based FeFETs toward neuromorphic applications.