Effect of Optical Phonon Scattering on the Performance of GaN Transistors

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors. The model is able to resolve these peculiarities and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical-phonon scattering is strong.