Measurement of heavy doping parameters in silicon by electron-beam-induced current

Limits on the magnitude of bandgap narrowing and Auger recombination in heavily phosphorus-diffused silicon layers ∼ 10 20 cm -3 have been measured by electron-beam-induced current. It is determined that the slope of the bandgap narrowing versus doping must be nearly zero above 3 × 10 19 cm -3 to be consistent with previous data at lower doping levels. It is also shown that the low-level minority-carrier lifetime in these layers is consistent only with an Auger recombination coefficient <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CN < 0.4 × 10⁻³¹</tex> cm 6 /s.