Answers are grounded in this paper and cite their sources.
Evaluates piezoelectric properties of scandium aluminum nitride films, suggesting enhanced performance with increased scandium content.
We report the growth of scandium aluminum nitride (ScAlN) thin films utilizing plasma-enhanced atomic layer deposition (PE-ALD). The scandium (Sc) content is controllably varied up to 25% by tuning the deposition parameters. These films exhibited excellent surface morphology with a small root mean square roughness of 0.5 nm or less. The ALD growth window for ScAlN is identified between 225 and 250 °C, with a precursor pulse saturation achieved at 1.5 s. The piezoelectric coefficients (d33) were characterized using piezoresponse force microscopy (PFM) and laser-Doppler vibrometry (LDV) measurements and found to increase from 9.3 pm/V for 10% Sc to 17 pm/V for 25% Sc, which are comparable to those reported for ScAlN grown by conventional sputtering or epitaxial methods.
No takes yet. Share an insight, caveat, or question.
Tanim et al. (2025) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: