Answers are grounded in this paper and cite their sources.
III-V heterojunction bipolar transistors (HBTs) enjoy several advantages over their conventional silicon cousins. These include: (1) a thinner base and lower base resistance which yields higher gain and f max ; (2) high breakdown voltage; (3) low parasitics; (4) high power density. The combination of a thin base (higher f T ), low base resistance (higher f max ), and low parasitics in particular make HBTs a suitable choice for high- frequency applications.
No takes yet. Share an insight, caveat, or question.
McMacken et al. (2008) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: