Tellurium-based II-VI compound semiconductors and heterostructures under strain

Reviews work on some of the electronic and structural properties of CdTe-(CdZn)Te and CdTe-(CdMn)Te strained-layer quantum wells and superlattices under high pressure. The hydrostatic pressure dependence of the band gap of CdTe is deduced to be E g =E go +76P (meV GPa -1 )-4P 2 (meV GPa -2 ) consistent with all the available data, and for ZnTe is E g =E go +105P-2P 2 . Results obtained by piezomodulation of the subband structure of such systems are also presented. The authors determine the values of the CdTe shear deformation potentials: b=-1.17 eV and d=-3.20 eV.