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Infrared absorption lines observed at low temperatures in Zn-doped GaAs epilayers passivated with hydrogen and deuterium are ascribed to As-H and As-D stretching modes where the As atom involved is the first neighbour of the Zn acceptor. This attribution is shown to be consistent with a model for hydrogen passivation of acceptors on gallium sites in GaAs.
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Pajot et al. (1987) studied this question.
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