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Data are presented demonstrating low threshold continuous wave operation of AlAs/GaAs/InGaAs vertical cavity surface emitting lasers. Continuous wave thresholds of 470 μA have been realized for device diameters of /spl sim/4 μm, and 1.1 mA for a device diameter of 10 μm. A two-step molecular beam epitaxial growth process is used which results in a buried etched void surrounding the active cavity of the laser.
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Hansing et al. (1994) studied this question.
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