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The minimum power dissipation of micropower integrated circuits is often limited by the availability of large-value monolithic resistors. Two major types of field-effect resistor structures are examined and an analysis of the primary factors that determine sheet resistance and parasitic capacitance is presented. Resistor tolerance, linearity, and temperature coefficient are briefly discussed. It is shown that resistors with sheet resistances greater than 50 k/spl Omega///spl square/ and parasitic capacitances less than 0.002 pF/k/spl Omega/ can be readily fabricated in a monolithic structure.
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Hudson et al. (1972) studied this question.
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