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December 1, 1975IEEE Journal of Solid-State Circuits

Low-noise integrated silicon-gate FET amplifier

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Authors

ABA. BoornardRCA (United States)EHEric HerrmannTechnische Universität BraunschweigSHS.T. HsuNational Cheng Kung University

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Boornard et al. (1975) studied this question.

synapsesocial.com/papers/6a6f2d7de5469ee92be038d5https://doi.org/10.1109/jssc.1975.1050658
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