Experimental study demonstrates enhanced surface layer sensitivity in lapped gallium arsenide crystals, indicating superior defect detection over conventional diffraction methods.
It is shown that thin surface layers can be sensitively characterized by using an X-ray double-crystal method, in which a sample designated as the first crystal is irradiated with incident X-rays at a low glancing angle and the X-rays reflected from the surface layer are analyzed by a second crystal. The applicability is proved by observing GaAs crystals lapped with fine abrasives. Deviation of the full width at half-maximum (FWHM) of the rocking curve for lapped crystals from that of a perfect crystal is a few times larger than the value obtained by the conventional method in which the sample is the second crystal.
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Nobuo Itoh (1992) studied this question.
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