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January 22, 2015IEEE Electron Device Letters

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

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Authors

FLFinella LeeNational Taiwan UniversityLSLiang-Yu SuNational Chung Hsing UniversityCWChih‐Hao WangJoslin Diabetes Center

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Lee et al. (2015) studied this question.

synapsesocial.com/papers/6a6f2fe4a7fbea1e4407af86https://doi.org/10.1109/led.2015.2395454
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