What question did this study set out to answer?

To establish a post-fabrication trimming technique for silicon ring resonators by using electron-beam-induced oxide compaction and strain to compensate for nanoscale manufacturing variations.

March 6, 2008Optics ExpressOpen Access

Trimming of silicon ring resonator by electron beam induced compaction and strain

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Authors

JSJonathan Schrauwen DTDries Van Thourhout RBRoel Baets

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Overview

Experimental study demonstrates a 4.91 nm resonance red shift in silicon ring resonators using electron beam compaction, suggesting an effective method to trim post-fabrication photonic errors.

Key Points

To establish a post-fabrication trimming technique for silicon ring resonators by using electron-beam-induced oxide compaction and strain to compensate for nanoscale manufacturing variations.
Targeted an electron beam onto the oxide cladding of a silicon-on-insulator photonic chip to induce localized volume compaction.
Used the resulting compaction to alter the oxide refractive index and apply mechanical strain to the silicon cavity lattice.
Achieved a resonance wavelength red shift of 4.91 nm in the treated silicon ring resonator.
Demonstrated that electron beam compaction reliably modulates optical cavity characteristics via simultaneous refractive index modification and strain engineering.

Cite This Study

Schrauwen et al. (2008) studied this question.

synapsesocial.com/papers/6a6f4bd1febe604dd70842cf https://doi.org/10.1364/oe.16.003738

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March 6, 2008Optics ExpressOpen Access

Trimming of silicon ring resonator by electron beam induced compaction and strain

View Full Paper

Ask AI

Bookmark

Authors

JSJonathan Schrauwen DTDries Van Thourhout RBRoel Baets

Discussion

Member takes

Overview

Experimental study demonstrates a 4.91 nm resonance red shift in silicon ring resonators using electron beam compaction, suggesting an effective method to trim post-fabrication photonic errors.

Key Points

To establish a post-fabrication trimming technique for silicon ring resonators by using electron-beam-induced oxide compaction and strain to compensate for nanoscale manufacturing variations.
Targeted an electron beam onto the oxide cladding of a silicon-on-insulator photonic chip to induce localized volume compaction.
Used the resulting compaction to alter the oxide refractive index and apply mechanical strain to the silicon cavity lattice.
Achieved a resonance wavelength red shift of 4.91 nm in the treated silicon ring resonator.
Demonstrated that electron beam compaction reliably modulates optical cavity characteristics via simultaneous refractive index modification and strain engineering.

Cite This Study

Schrauwen et al. (2008) studied this question.

synapsesocial.com/papers/6a6f4bd1febe604dd70842cf https://doi.org/10.1364/oe.16.003738

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