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May 1, 1971Radiation Effects

Measurement of lattice damage caused by ion-implantation doping of semiconductors†

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Authors

RHRobert G. HunspergerCalifornia Institute of TechnologyEWE. D. WolfSemiconductor Research CorporationGSG. A. ShifrinHRL Laboratories (United States)

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Hunsperger et al. (1971) studied this question.

synapsesocial.com/papers/6a6f4da96ceb2bbd16dfa4c9https://doi.org/10.1080/00337577108242045
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Also Consider

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  1. 1Optical Reflection Studies of Damage in Ion Implanted Silicon1970 · 56 citations
  2. 2MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE1970 · 25 citations
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  4. 4Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium Arsenide1969 · 43 citations
  5. 5ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION1969 · 60 citations