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October 1, 1983Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction study

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Authors

TJT. de JongQuTechWDW. A. S. DoumaInstitute for Atomic and Molecular PhysicsLSL. SmitUniversity of the Witwatersrand

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Cite This Study

Jong et al. (1983) studied this question.

synapsesocial.com/papers/6a6f72d88031ec7bb1dbc13dhttps://doi.org/10.1116/1.582709
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